Alexandre Pofelski is a research associate and electron microscopy specialist with nine years of experience applying advanced TEM/STEM techniques to semiconductor and materials science problems. He holds a PhD from McMaster University where he developed a novel strain characterization method using Moiré interferometry and continued that hands-on instrument development as a postdoc and at Brookhaven. Alexandre has led TEM-based strain and crystallographic analysis in industry (STMicroelectronics) and national labs, combining technical depth in DFH/DFEH, NBED, HRSTEM+GPA and EDX/EELS quantification with practical sample-prep and process-awareness for CMOS nodes. Currently based at the Canadian Centre for Electron Microscopy in Hamilton, he blends academic rigor with applied R&D, and has a proven track record of translating microscopy innovations into usable characterization workflows. An understated strength is his teaching and mentorship experience across multiple university courses, which helps him communicate complex imaging concepts to diverse technical audiences.
9 years of coding experience
9 years of employment as a software developer
Undergraduate courses to prepare for entry exams to French engineer school, Undergraduate courses to prepare for entry exams to French engineer school at Classes préparatoires (CPGE) (Lycée Champollion - Grenoble)
Doctor of Philosophy - PhD, Doctor of Philosophy - PhD at McMaster University
High School, High School at Lycée du Grésivaudan
Master's Degree, Master's Degree at Grenoble INP - Phelma
Master's Degree, Master's Degree at Université Joseph Fourier (Grenoble I)
Reconstruction of an oversampled micrograph from a STEM Moiré hologram
Contributions:42 commits, 2 PRs, 41 pushes in 1 month
hologrammicrographreconstructionstem
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