Summary
Anton Vasilev is a PhD researcher at NUST MISIS specializing in wide-bandgap semiconductors (α- and κ-Ga2O3, GaN) with eight years of experience in material and device characterization. He combines deep expertise in defect spectroscopy techniques (DLTS, Laplace DLTS, ODLTS, CDLTS, PERS) with hands-on feedback to growth teams to optimize crystal quality and device performance. Skilled in semiconductor and device physics, he also applies Python and Mathematica for data analysis and experiment design. Anton routinely handles both conductive and highly resistive materials, translating subtle defect signatures into actionable process improvements. His academic excellence (top marks through bachelor’s and master’s) underpins a pragmatic research approach that bridges fundamental characterization and applied device engineering.
8 years of coding experience
National University of Science and Technology "MISIS" (Moscow Institute of Steel and Alloys)