H Rahman is a Quality and Reliability Engineer with nearly a decade of hands-on experience developing, qualifying, and sustaining thin-film deposition tools and processes for advanced semiconductor nodes. He has led successful ALD, PVD and PSMBE tool upgrades and technology transfers across 45nm to 10nm nodes, driving yield and throughput improvements through DOE, SPC/APC, and targeted taskforces. At Intel and Samsung he resolved persistent equipment failure modes (pump, inlet clogging, target arcing), implemented process innovations that cut scrap and extended component life multiple-fold, and authored the operational specs and RFCs used for HVM ramps. Trained as a materials scientist (PhD), he combines device-aware process engineering with equipment-level troubleshooting and vendor collaboration to translate lab solutions into reliable fab production. Notably, he introduced a dual/split WIP processing mode that doubled tool output and developed heater/insulation procedures that significantly increased exhaust line life, demonstrating both practical creativity and systems-level impact.
8 years of coding experience
15 years of employment as a software developer
Doctor of Philosophy (Ph.D.), Materials Science and Engineering, Doctor of Philosophy (Ph.D.), Materials Science and Engineering at Wayne State University
Bachelor of Science (B.Sc.), Metallurgical Engineering, Bachelor of Science (B.Sc.), Metallurgical Engineering at Bangladesh University of Engineering and Technology
Contributions:4 PRs, 47 pushes, 9 branches in 6 years 2 months
openshmem
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H Rahman - Quality And Reliability Engineer at Samsung