Summary
Haeyeon Kim is an SI/PI engineer with eight years' experience specializing in power integrity for advanced DRAM technologies, currently working on HBM4/4E/5 at SK hynix. She combines industry roles at SK hynix and Samsung Electro-Mechanics with deep academic training—pursuing a PhD in Electrical Engineering at KAIST after completing both master's and bachelor's degrees there. Her work bridges device-level design and system integration, bringing practical volume-product DRAM experience to cutting-edge memory power delivery challenges. She maintains an academic profile with publications and citations, reflecting a research-oriented approach to problem solving that complements her production engineering background. Based in Daejeon, South Korea, she is comfortable operating at the intersection of R&D and manufacturing, translating theoretical insights into robust, high-volume memory designs. An international education background (Yew Chung International School, Shanghai) underpins strong cross-cultural communication skills valuable in global semiconductor projects.
7 years of coding experience
YCIS Shanghai 上海耀中外籍人员子女学校 Yew Chung International School of Shanghai
Doctor of Philosophy - PhD Electrical Engineering, Doctor of Philosophy - PhD Electrical Engineering at Korea Advanced Institute of Science and Technology
Korean, Chinese, English