Summary
Shangfeng Liu is an assistant professor and materials-focused researcher with nine years’ experience in III-nitride and III-V epitaxy, combining a PhD in condensed matter physics from Peking University with a bachelor’s in microelectronic engineering. He has led MOCVD process development that produced 4-inch high-yield UVC-LED wafers and optimized InP-based quantum dot laser growth on silicon, demonstrating both device-level insight and manufacturing-scale process control. His work bridges fundamental studies of strain and dislocation evolution with practical solutions—such as strain-manipulation epitaxy and high-temperature annealed AlN—to improve wafer uniformity and yield. Based in Xi’an and now in academia at Great Bay University, he is expanding into deeper MOCVD growth mechanisms and novel device physics while maintaining close collaborations with chip fabrication teams. An analyst by training, he pairs careful characterization (XRD, EL, PL) with iterative process optimization to translate lab discoveries into scalable optoelectronic devices.
9 years of coding experience
6 years of employment as a software developer
Bachelor's degree, Microelectronic Engineering, Bachelor's degree, Microelectronic Engineering at Sichuan University
Doctor's Degree, Condensed Matter and Materials Physics, Doctor's Degree, Condensed Matter and Materials Physics at Peking University